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It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch ...

Active gases · Fluorine species. SF6, CF4, CHF3, C4F8; Used mainly for etching silicon based materials and a few metals · Chlorine and bromine species. Cl2, BCl ...

The most common gases used in etching are fluorine-based or chlorine-based. Common fluorine-based gases are CF4, SF6, CHF3, C4F8, ...

The selectivity and etch rate depend very strong on the process gases. For silicon and silicon compounds fluorine and chlorine gases are used primarily. 4.

There are only a few gases commonly used for plasma etching, namely argon, hydrogen, oxygen and some fluorine compounds (or mixtures of those, respectively).

Plasma Etching is a dry etching method which is the best way to clean a surface before modification. It removes any unwanted organic residues.

Plasma etching is a process used to remove material from the surface of a substrate using a plasma created with oxygen, argon, CF4 or other appropriate gas.

2023/2/21 -Unlike photolithography, etching exposes an entire wafer to gas. For etching to proceed, substances must be circulated by injecting reactant gas ...

2023/12/14 -The gas delivery system controls the flow of etching gases into the plasma chamber. This system usually includes: Gas supply lines; Flow ...

Plasma etching is used to 'roughen' a surface, on the microscopic scale. The surface of the component is usually etched with a reactive process gas which gives ...